Samsung Achieves Breakthrough in 16-Layer Hybrid Bonding Technology for HBM4 Memory

Samsung announces successful verification of its 16-layer hybrid bonding process, poised to revolutionize HBM4 memory applications with enhanced performance.

Samsung Electronics has recently announced the successful completion of its verification process for a 16-layer hybrid bonding stacking technology, marking a significant advancement in-memory technology.

This development was shared by Dae Woo Kim, a high-ranking official in Samsung’s advanced packaging team, during the annual meeting of the Microelectronics and Packaging Society in South Korea for the year 2024.

samsung beol metal design for hcb
Image source: The Elec

The technology, which involves a 16-layer stack of HBM3 memory using hybrid bonding, has shown promising results with operational memory samples. Looking forward, Samsung aims to apply this technology to the mass production of HBM4 memory.

Unlike traditional bonding processes, hybrid bonding does not require the addition of micro bumps between DRAM memory layers. Instead, it employs a direct copper-to-copper connection, significantly boosting signal transmission rates. This feature makes it particularly suited for AI computing, which demands high bandwidth.

Moreover, hybrid bonding can reduce the gap between DRAM layers, leading to a decrease in the overall height of the HBM module. However, this advancement comes with its challenges, including the technology’s novelty and the high costs associated with its application.

Samsung is pursuing a dual-strategy in HBM4 memory bonding technology, developing both hybrid bonding and the conventional TC-NCF (Thermal Compression with Non-Conductive Film) processes.

hbm roadmap samsung
Image Source: The Elec

The height limit for HBM4 modules has been extended to 775 micrometers, accommodating the continued use of TC-NCF.

Samsung is also focused on reducing the wafer gap in the TC-NCF process to below 7.0 micrometers for HBM4, addressing critiques of TC-NCF technology compared to competitors’ approaches, such as SK Hynix’s MR-RUF, especially for high-stack modules of 12 to 16 layers.

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This technological milestone by Samsung not only underscores its commitment to innovation in memory technology but also sets a new benchmark for the industry, promising to enhance the capabilities and performance of future computing applications.

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Samsung Achieves Breakthrough in 16-Layer Hybrid Bonding Technology for HBM4 Memory

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