Intel is reportedly contemplating the introduction of Directed Self-Assembly (DSA) technology to assist in the High NA EUV lithography process, aiming to enhance the quality of patterns.
This consideration comes as part of efforts to address the conflicting demands of critical dimension (CD) exposure doses and the throughput of lithography machines in semiconductor fabrication.
DSA technology, one of the novel patterning techniques deemed partially substitutable for traditional lithography, utilizes the molecular properties of block copolymers to achieve patterning.
It is generally regarded as suitable for complementing traditional lithography rather than replacing it entirely.
The technology could correct feature errors on lithography patterns, thereby improving quality while reducing exposure doses and increasing the throughput of lithography machines, making High NA EUV lithography more cost-effective.
Additionally, Intel is also considering the integration of patterning shaping technology in High NA EUV lithography processes.
Applied Materials introduced the Centura Sculpta patterning shaping system last year, which precisely modifies features on wafers, reducing the number of lithography steps for the most critical layers and improving pattern quality.
Mark Phillip, a researcher at Intel, emphasized the necessity of supplementing lithography machines with additional equipment to enhance the efficiency of the lithography process.
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